| 摘要 |
A semiconductor laser device comprising a mount substrate, a semiconductor laser element, and a total reflection mirror. The substrate includes an n-type Si substrate, an i-type Si layer deposited on a part of the Si substrate, and a p-type Si layer deposited on the Si layer. The Si substrate and Si layers constitute a pin photodiode. A part of the sides of the Si layers is a sloping surface. The laser element is mounted on the substrate and has a light-emitting surface opposing the sloping surface. The mirror is provided on a part of the sloping surface. It reflects and outputs a central part of a light beam emitted from the laser element. It guides the remaining part of the light beam to the photodiode.
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