| 摘要 |
PROBLEM TO BE SOLVED: To enhance semiconductor chip's capability to protect its surface and further improve the yield in a bonding hole formation process. SOLUTION: Wiring layers 18, 20a-20c, 22A and a terminal electrode layer 22 are formed on the surface of a semiconductor substrate 10 with insulating films 12, 16 and so on in-between. Subsequently, the top side of the substrate is spin-coated with an oxygen-silsesquioxane resin film, and is heat-treated to form a ceramic silicon oxide film 32. A surface protective film 34, such as silicon nitride or the like, is formed to cover the film 32. Thereafter, a bonding hole 34a corresponding to the electrode layer 22 is formed in the lamination of the film 32 and a film 34. In order to prevent the film 34 from reflecting microminiature projections in the film 32, an insulating film may be placed between the films 32, 34. Or, the film 34 may be formed after the resin film is turned into pre-ceramic and before it is turned into ceramic. |
