| 摘要 |
1,100,703. Magnetic storage devices. SIEMENS A.G. 17 March, 1965 [17 March, 1964; 25 May, 1964], No. 11225/65. Headings HlH and H1T. A magnetic element for a memory store comprises a plurality of thin magnetic layers 5, 6, 7, 8, e.g. of permalloy, arranged in a stack and separated by thinner layers of substantially non-magnetic material 9, 10, 11. The layer 9 may separate the stack into two groups of layers and may be of silicon monoxide or of metal. The layers 10, 11 may be of conducting material such as gold, copper, aluminium, chromium or tin, of an oxide of silicon or of a mixture of several metals with possibly one or more insulating substances. The separating layers may be made inhomogeneous, e.g. in parts the mixture of a metal and silicon oxide, of which they may be formed, may be mostly metal and in other parts may contain little metal. The carrier layer 12 may act as a return path for a read-out line. |
