| 摘要 |
A light emitting diode structure is formed on a substrate. A nucleation layer at low temperature is formed on the substrate. A buffer layer is formed on the nucleation layer for easing the subsequent formation of crystal growth. N active layer is disposed between an upper confinement layer and a lower confinement layer. The active layer include the semiconductor material doped with III-N elements. A contact layer is disposed on the upper confinement layer. A reversed tunneling layer is form on the contact layer, wherein the conductive types for both are different. A transparent layer is formed on the reversed tunneling layer. A cathode electrode contacts with the conductive buffer layer and is separated from the active layer and the transparent electrode.
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