发明名称 |
Reference current generation circuit for multiple bit flash memory |
摘要 |
A reference current generation circuit for the multiple bit flash memory provided by the present invention applies the same boosted word-line voltage to the gates of different reference current generation unit's reference cells, and uses different gate lengths from different reference cells to obtain the reference currents with different levels that are needed. Therefore, it effectively solves the problem of the reference currents having different drifts along with the variance of the temperature and the power voltage Vcc.
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申请公布号 |
US6687160(B1) |
申请公布日期 |
2004.02.03 |
申请号 |
US20020064918 |
申请日期 |
2002.08.29 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
FAN TSO-HUNG;YEH CHIH-CHIEH;LU TAO-CHENG |
分类号 |
G11C5/14;G11C11/56;G11C16/12;(IPC1-7):G11C16/06 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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