发明名称 |
Negative differential resistance (NDR) device and method of operating same |
摘要 |
An n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits negative differential resistance in its output characteristic (drain current as a function of drain voltage) is disclosed. The MISFET includes a dynamically variable and reversible threshold voltage which is controlled by a source-drain bias. A channel region of the MISFET is doped so as to enhance an electric field associated with the source-drain bias, and thus cause charge carriers to tunnel out of the channel and into a trapping region. A net charge in the trapping region results from the source-drain bias which can be used as an additional control mechanism for conduction in the MISFET.
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申请公布号 |
US6686631(B1) |
申请公布日期 |
2004.02.03 |
申请号 |
US20020315741 |
申请日期 |
2002.12.10 |
申请人 |
PROGRESSANT TECHNOLOGIES, INC. |
发明人 |
KING TSU-JAE;LIU DAVID K. Y. |
分类号 |
H01L29/78;G11C5/14;G11C11/39;G11C16/04;H01L21/28;H01L21/8238;H01L27/088;H01L27/092;H01L29/66;H01L29/788;H01L29/792;(IPC1-7):H01L29/72 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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