发明名称 Semiconductor device, display device, and method of manufacturing the same
摘要 In order to eliminate the disconnection of a pixel electrode caused by a change in shape of an interlayer insulating film at the ends of metal wiring, a resin film is formed at the ends of the metal wiring. Because of the resin film at the ends of the metal wiring, the step difference of the ends of the metal wiring is alleviated, and even if the interlayer insulating film is changed in shape, the ends of the metal wiring is prevented from peeling, whereby the disconnection of the pixel electrode can be prevented. Furthermore, the resin film flattens the surface of the interlayer insulating film, and prevents an alignment defect of liquid crystal molecules and a non-uniform electric field, thereby suppressing a minute defect of a light-emitting device caused by the roughness of the surface of the pixel electrode.
申请公布号 US6686605(B2) 申请公布日期 2004.02.03
申请号 US20020199506 申请日期 2002.07.22
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SAKAKURA MASAYUKI;MURAKAMI SATOSHI;YAMAGATA HIROKAZU
分类号 G02F1/1368;G02F1/1362;G09F9/30;H01L21/20;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L31/037;H01L31/20 主分类号 G02F1/1368
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