| 摘要 |
A CMOS field effect transistor (FET) is provided with predetermined temperature characteristics. More particularly, the relationship between the channel length, gate width, gate-to-source voltage, and drain current is exploited to create an FET that has relatively constant drain current across a relatively wide range of frequencies. Alternately, the above-mentioned relationship is exploited to create a drain current with a predetermined temperature coefficient across a wide temperature range.
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