发明名称 |
Method of producing a capacitor electrode with a barrier structure |
摘要 |
A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the barrier structure. The capacitor electrode with an underlying barrier structure is produced by depositing a barrier layer on a semiconductor substrate; forming a barrier structure from the barrier layer with a lithographic mask and an etching step; depositing a barrier incorporation layer covering the barrier structure and surrounding regions; and removing the barrier incorporation layer with chemical mechanical polishing until the barrier structure is uncovered, to thereby form the capacitor electrode above the barrier structure.
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申请公布号 |
US6686265(B2) |
申请公布日期 |
2004.02.03 |
申请号 |
US20020127618 |
申请日期 |
2002.04.22 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BEITEL GERHARD;SAENGER ANNETTE;KASKO IGOR |
分类号 |
H01L21/28;H01L21/02;H01L21/285;H01L21/3105;H01L21/321;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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