| 摘要 |
1,087,277. Semi-conductor diode matrices. BROWN, BOVERI & CIE A.G. Feb. 22, 1965 [March 13, 1964; March 14, 1964], No. 7592/65. Heading H1K. [Also in Division G4] The diodes of a matrix are formed simultaneously on a common insulating support. In a typical arrangement the columns of the matrix are formed by etching a titanium layer vapour deposited over one face of a glass substrate. Rectifying diodes of the matrix are formed on the columns by anodic oxidation at diode sites followed by vapour deposition of platinum electrodes. Platinum tracks connecting these electrodes in rows may be deposited at the same time or a different metal used for this purpose deposited subsequently, the tracks being insulated where they intersect the columns by lacquer or by a thick oxide layer on the columns. Each platinum electrode may be connected into a row by a link, including a constricted section. Selected diodes may then be permanently disconnected by passing a high current through the associated links to evaporate these sections. Alternatively each link includes a photoresistive element e.g. of cadmium sulphide whereby the diodes can be selectively connected by illumination through a card punched with holes indicative of information to be stored. In a further arrangement the platinum electrodes are associated with individual contacts selected ones of which may be connected into a row by engagement with a brush bar through holes in a punched card. In all cases the matrix is provided with a protective coating except at points where electrical access is required. |
