| 摘要 |
PURPOSE: To provide a semiconductor device with a simplified capacitor structure. CONSTITUTION: A capacitor CP10 and source/ drain regions 11 and 13 are connected electrically by contact plugs 101 each inserted into the capacitor CP10 to reach the source/the drain 11 and 13 regions. The capacitor CP10 includes a capacitor upper electrode 103 arranged so as to be embedded in an upper principal surface of an interlayer insulating film 3 and a capacitor dielectric film 102 provided so as to cover a side surface and undersurface of the capacitor upper electrode 103. Further, the capacitor dielectric film 102 is provided also so as to cover the side surface of the contact plugs 101 provided so as to penetrate the capacitor upper electrode 103, and a portion covered with the capacitor dielectric film 102 of the contact plugs 101 functions as a capacitor lower electrode 101. |
