| 摘要 |
PURPOSE: A method for fabricating a contact of a semiconductor device is provided to minimize damage to a semiconductor substrate by performing a landing plug contact etch process by dry and wet methods. CONSTITUTION: The first, second and third etch barrier layers(51,53,55) are formed on the semiconductor substrate(41) having a gate electrode. A lower insulation layer(57) is formed on the resultant structure. A landing plug contact hole is formed by a photolithography process using a landing plug contact mask. The third, second and first etch barrier layers are etched to form a landing plug contact hole by a dry/wet/dry method.
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