| 摘要 |
PURPOSE: To provide an inductively coupled plasma processing apparatus that can suppress deflection of a partition structure partitioning a treatment chamber, including a dielectric wall and an antenna chamber from each other, without making the support portion of the dielectric wall larger in size nor making the dielectric wall larger in thickness. CONSTITUTION: This inductively coupled plasma processing apparatus comprises the treatment chamber 4 in which plasma processing is performed on a substrate G, a process gas supply system 20 which supplies process gas into the processing chamber 4, and an exhaust system 30, which exhausts the gas in the chamber 4. This device also comprises the dielectric wall 2, constituting the top wall of the treatment chamber 4, a high-frequency antenna 15 provided above the wall 2, and the antenna chamber 3 which is provided above the treatment chamber 4 and houses the antenna 15 and the bottom wall of which is formed of the dielectric wall 2 and vertical walls 5, which divide the antenna chamber 3 into a plurality of small chambers 6 and supported by the sidewalls 3a of the chamber 3. The dielectric wall 2 is split into a plurality of pieces, corresponding to the small chambers 6, and each split piece 2a of the wall 2 is supported by the sidewalls 3a of the antenna chamber 3 and vertical walls 5.
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