| 摘要 |
PURPOSE: A method for trimming a reference cell of a flash memory device is provided to prevent defect generation by trimming the reference cell to have an equal cell current in an excessively erased cell or in other cells having different conditions. CONSTITUTION: According to the method for trimming a reference cell of a flash memory device, a program is performed as varying a voltage condition after maintaining a constant threshold voltage by performing recovery to the reference cell. The above recovery is performed by applying 0 V to a gate and a source and a substrate of the reference cell and by applying 3.5 V or 5.5 V to a drain of the reference cell. And the above recovery is performed for 1 msec or 10 msec.
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