| 摘要 |
PURPOSE: A method for etching a semiconductor wafer is provided to maintain an effect of an etch mask independently of the deformation of the etch mask by performing an etch process without removing an etch mask. CONSTITUTION: A base-layer(20) is formed on an upper surface of a semiconductor wafer(10). An etch process for a surface of the base-layer(20) is performed by using an etch mask(30). A lift-off material is deposited thereon by using the etch mask(30) as a lift-off pattern without removing the etch mask(30). A deposition layer(40) is formed on the etch mask(30). A lift-off process is performed by using the unremoved etch mask(30).
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