| 摘要 |
PURPOSE: A method for forming a transistor of a semiconductor device is provided to be capable of increasing the degree of integration and improving the reliability of the device by forming a vertical structure transistor using a dot mask. CONSTITUTION: After the first impurity junction region(33) at the upper surface of a semiconductor substrate(31) is formed, a plurality of trenches are formed by selectively etching the resultant structure using a dot mask. After the second impurity junction region(43) is formed at the bottom portion of each trench, a buried oxide layer is formed at the inner portion of each trench. A line type photoresist pattern is formed at the upper portion of the resultant structure for exposing the buried oxide layer. After the buried oxide layer is removed, a thermal oxide layer(49) is formed at the inner surface of each trench. Then, a conductive spacer(51) is formed at both sidewalls of each trench.
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