| 摘要 |
PURPOSE: A method for manufacturing a transistor is provided to prevent spiking and reduce parasitic serial resistance by forming a buried gate electrode. CONSTITUTION: After the first trench is formed at a semiconductor substrate(51), the second pad oxide layer(57) is formed along the upper surface of the resistant structure. After the first nitride spacer(59) is formed at both sidewalls of the first trench, the second trench is formed at the lower portion of the first trench by using the first nitride spacer as an etching mask. Then, an oxide spacer(65) is formed at both sidewalls of the second trench. After a gate oxide layer(69) is grown at the predetermined upper portion of the substrate, a gate electrode(71) is formed at the inner portion of the trenches. Then, a source/drain region(73) is formed at both sides of the gate electrode in the substrate.
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