| 摘要 |
PURPOSE: A circuit and a method for controlling an internal power supply voltage generator of a semiconductor memory device are provided to improve an operation speed and reduce current consumption simultaneously. CONSTITUTION: According to the semiconductor memory device, a plurality of banks(110A-110D) include a plurality of memory cells to store data respectively. A power supply line(PWRL) transfers an internal power supply voltage(Vint) to be supplied to the above banks in common. A plurality of internal voltage generation circuits(120A-120D) are connected to the above power supply line in common, and supply the internal power supply voltage to the power supply line respectively. And a control circuit(130) controls the activation of the internal voltage generation circuits in response to bank information and command information. When one of the above bank is selected, the above control circuit enables the internal voltage generation circuits at the same time, and after a fixed time, makes the internal voltage generation circuits corresponding to unselected banks be disabled.
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