RF BULK ACOUSTIC ELEMENT USING PIEZOELECTRIC SINGLE CRYSTAL AND FABRICATING METHOD THEREOF

摘要

PURPOSE: An RF bulk acoustic element using a piezoelectric single crystal and a fabricating method thereof are provided to control the thickness of a piezoelectric layer by using an anisotropic etch method. CONSTITUTION: An RF bulk acoustic element using a piezoelectric single crystal includes a piezoelectric layer(4), a coupled of electrodes(6), a couple of pads(8), and a connector(7). The piezoelectric layer(4) is formed by performing an anisotropic etch process for a piezoelectric single crystal(2) to form two grooves(3). The electrodes(6) are formed on both sides of the piezoelectric layer. The pads(8) are formed on an upper surface of the piezoelectric single crystal(2) between the piezoelectric layers in order to be connected to a power source or a circuit. The connector(7) is formed along each bottom face and each side of the grooves(3).