FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A method for obtaining a ferroelectric memory device is provided to reduce thermal budget of a resistant electrode. CONSTITUTION: A method for obtaining a ferroelectric memory device comprises a step(52) for forming smooth iridium of low-tension on a semiconductor structure, a step(54) for forming smooth iridium oxide of low-tension having a pure phase structure on the smooth iridium of low-tension, and a step(56) for forming a ferroelectric material on the iridium oxide.