METHOD FOR FORMING HIGH-VOLTAGE JUNCTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a high-voltage junction of a semiconductor device is provided to prevent a channeling by forming an amorphous layer on a double diffused drain junction, implanting impurities into the amorphous layer, and activating the impurities. CONSTITUTION: A double diffused drain junction(103) is formed on a junction region of a semiconductor substrate(101) having a stacked structure of a gate oxide layer(102a) and a gate electrode(102b). A contact plug forming region of the double diffused drain junction(103) is exposed. The double diffused drain junction is amorphized as much as the first depth by performing the first ion implantation process. The double diffused drain junction(103) is amorphized as much as the second depth by performing the second ion implantation process. The impurities implanted into the double diffused drain junction(103) are activated by a thermal process.