| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent bridge between lower electrodes by preventing loss of a capacitor oxide layer. CONSTITUTION: The first nitride layer(23), the first and second capacitor oxide layer(24,25) are sequentially formed on a substrate(20). After the second and first capacitor oxide layer, and the first nitride layer are etched, a capacitor hole is formed by partially removing sidewalls of the first capacitor oxide layer. The second nitride layer(27) is formed on the capacitor hole. A lower electrode(200) is formed by forming sequentially a polysilicon layer(28) and an HSG layer(29) on the second nitride layer. The lower electrode on the capacitor oxide layer is then removed.
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