| 摘要 |
PURPOSE: A substrate growth apparatus capable of controlling temperature by controlling gas flow is provided to be capable of decreasing the temperature of a substrate. CONSTITUTION: A substrate growth apparatus is provided with a reaction furnace(20) having an exhaust port at both sides, a pair of suction ports formed at the upper portions of the reaction furnace for flowing ammonia and nitrogen gas into the reaction furnace, a powder part(10) installed at the lower portion of the reaction furnace, and a substrate(40) spaced apart from the powder part. The substrate growth apparatus further includes a susceptor for reacting powder to the substrate and an outer valve for directly flowing reaction gas to the susceptor. Preferably, the ammonia and nitrogen gas are used as the reaction gas.
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