| 摘要 |
PURPOSE: A method for forming a word line of a semiconductor device is provided to enhance the yield and the reliability by forming the word line with the first and the second gate electrodes. CONSTITUTION: The first type first gate electrode(37) is formed on the first conductive type semiconductor substrate including an isolation layer. A source/drain region(39) is formed on the semiconductor substrate of both sides of the first gate electrode(37). An interlayer dielectric(41) is formed on the entire surface of the semiconductor substrate. The interlayer dielectric(41) and the first gate electrode are planarized by performing an etch process. The second gate electrode(43a) of a line type is formed on the gate electrode. A word line is formed by using the first and the second gate electrodes(37,43a).
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