| 摘要 |
PURPOSE: A method for forming a storage node of a semiconductor device is provided to be capable of preventing the generation of a leaning phenomenon between storage nodes when a sacrificial oxide layer is removed. CONSTITUTION: After a lower insulating layer(31) having a plurality of storage node contact plugs(33) is formed at the upper portion of a semiconductor substrate, the first sacrificial oxide layer(37) is formed at the upper portion of the resultant structure. After the first conductive layer(41) is formed at the inner portion of the first sacrificial oxide layer, the second sacrificial oxide layer(43) is formed on the entire surface of the resultant structure. Then, a trench is formed by carrying out an etching process at the second sacrificial oxide layer and the first conductive layer. A storage node is completed by forming the second conductive layer(47) at the inner surface of the trench.
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