发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PURPOSE: To effectively control gate-leak currents and GIDL currents while effectively controlling the off-leak currents of a plurality of memory cells in a semiconductor memory device. CONSTITUTION: The precharge potential of a non-selection bit line among a plurality of bit lines 5 is set by an HPR voltage source 2 to be lower than a power source voltage Vcc(a low voltage of 0.5V to 1.2V, for example, 0.8V) which determines the electric potential on the high side of the data stored in the memory cell. The electric potential of a non-selection word line among a plurality of word lines 4 is set by a NWL voltage source 1 to be a prescribed potential(for example, -1/4Vcc=-0.2V). The total sum of the absolute values of the precharge potential(0.4V) of the non-selection bit line and minus potential(-0.2V) of the non-selection word line is set to be less than the power voltage Vcc(0.8V).
|
申请公布号 |
KR20040010365(A) |
申请公布日期 |
2004.01.31 |
申请号 |
KR20030050913 |
申请日期 |
2003.07.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMAUCHI HIROYUKI |
分类号 |
G11C11/41;G11C7/12;G11C11/417;H01L21/8244;H01L21/8246;H01L27/11;H01L27/112;(IPC1-7):G11C11/419 |
主分类号 |
G11C11/41 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|