METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve gap-filling property of an interlayer dielectric by deforming a gate profile. CONSTITUTION: A gate including a polysilicon layer(11) and a metal silicide layer(12) is formed on a semiconductor substrate(10). An oxide pattern(13) is formed on the gate. A nitride spacer(14) is formed at both sidewalls of the oxide pattern, thereby forming a hard mask(100). A gate pattern(200) having a sloped profile is formed by etching the metal silicide layer and the polysilicon layer using the hard mask(100) as a mask. A rounded hard mask pattern is formed by sputtering Ar to the hard mask. Then, an interlayer dielectric is formed. At the time, the oxide pattern(13) has a relatively narrow line-width compared to the line-width of the gate pattern(200).