| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device with a trench capacitor is provided to simplify manufacturing processes by simultaneously forming a word line spacer and a capacitor spacer. CONSTITUTION: A trench(1) is formed by selectively etching a substrate(100). After forming a cell junction in the substrate, a dielectric film(3a) and an upper electrode(4a) are formed in the trench. Word lines(5) are formed on the substrate. A word line spacer(6) is formed at both sidewalls of the word line and a capacitor spacer(6') is simultaneously formed at inner walls of the trench. A landing plug is then formed to connect the cell junction and the upper electrode.
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