| 摘要 |
PURPOSE: A method for manufacturing a buried type bitline is provided to be capable of restraining the generation of voids when an interlayer dielectric is deposited. CONSTITUTION: After forming the first interlayer dielectric on a semiconductor substrate, a plug is formed. After forming the second interlayer dielectric on the resultant structure, a line-type bitline contact hole(LBLC) is formed to expose the plug by selectively etching the second interlayer dielectric using a line-type mask. A spacer(NSS) is formed at both sidewalls of the line-type bitline contact hole. Then, a bitline(BL) is buried in the line-type contact hole(LBLC).
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