METHOD FOR FORMING CONTACT PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact pad of a semiconductor device is provided to be capable of achieving contact dimension and preventing losses of a hard mask. CONSTITUTION: A gate electrode structure(120) including a hard mask(115) is formed to define a contact pad formation region on a semiconductor substrate(100). The first interlayer dielectric(130) with voids between the gate contact structures is formed on the resultant structure. After expanding the voids on the contact pad formation region and removing the first interlayer dielectric on the gate electrode structure, the second interlayer dielectric is formed on the resultant structure. A contact hole(150) using the voids is then formed by polishing the second interlayer dielectric. A contact pad is formed by filling a conductive layer in the contact hole.