METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING HARD MASK

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing losses of a hard mask and restraining voids in an interlayer dielectric. CONSTITUTION: A plurality of gate lines including a hard mask(35) are formed on a substrate(31). Plugs(39) are formed between the gate lines. A barrier layer(40) and the first interlayer dielectric(41) are sequentially formed on the resultant structure. A bitline contact hole is formed to expose one plug by etching the first interlayer dielectric and the barrier layer. A bitline(43) is formed in the bitline contact hole. After forming the second interlayer dielectric(44), a storage node contact hole is formed to expose the other plug by patterning the second interlayer dielectric(44), the first interlayer dielectric(41) and the barrier layer(40). A storage node contact(47) is then formed in the storage node contact hole.