| 摘要 |
PURPOSE: A method for manufacturing an analog semiconductor device is provided to improve properties of a capacitor by preventing contact between a dielectric film and a silicide layer. CONSTITUTION: After forming an isolation layer(105) on a substrate(100), a gate electrode(115a) is formed on an active region and a lower electrode(115b) is simultaneously formed on the isolation layer. A dielectric film(125) and an upper electrode(130) are formed on the lower electrode. A spacer(135) is formed at both sidewalls of the gate electrode, the lower and upper electrode. After depositing a transition metal film(140) on the resultant structure, a transition metal silicide layer(145) is formed on the gate electrode, the exposed lower and upper electrode, and a junction region by annealing. Then, the remaining transition metal film is removed.
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