METHOD FOR REPAIRING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for repairing a semiconductor device is provided to repair easily a fuse having a multi-layer structure by performing the first repair process for cutting a polycrystalline silicon layer and the second repair process for removing an exposed metal layer. CONSTITUTION: A bottom insulating layer(13) is formed on an upper surface of a semiconductor substrate(11). A fuse having a stacked structure of a polycrystalline silicon layer(17) and a metal layer(15) is formed on a fuse box region of the semiconductor substrate(11). An interlayer dielectric(19) is formed on the entire surface of the semiconductor substrate(11). The first repair process is performed to cut the polycrystalline silicon layer(17) of the fuse by using the laser beam. The second repair process is performed to etch and remove the exposed metal layer(15).