| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the contact between a metal line and an Ru layer by completely removing the Ru layer of a peripheral region of a semiconductor substrate. CONSTITUTION: After the first interlayer dielectric(49) having a storage node contact plug(50) is formed at the upper portion of a semiconductor substrate(41), an etch stop layer(51) and a core insulating layer(53) are sequentially formed at the upper portion of the resultant structure. After the storage node contact plug is exposed by carrying out an etching process at the resultant structure, a storage node(55) is formed at the upper portion of the storage node contact plug. The first and second plate electrode(63) are then sequentially formed at the upper portion of the resultant structure. Preferably, the first plate electrode is made of one selected from a group consisting of an Ru layer, a Pt layer, an Ir layer, an RuO2 layer, or an IrO2 layer.
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