| 摘要 |
PURPOSE: A program/erase voltage supply circuit of a flash memory device is provided to improve reliability and lifetime of a device by performing a program/erase operation normally without regard to the variation of program/erase characteristics. CONSTITUTION: A program/erase voltage level determination part(110) counts the execution number of erase operations, and determines a level of a program/erase voltage supplied to a flash memory cell(C100) according to the total number of erase operations to compensate program/erase characteristics varying by the erase operation. And a program/erase voltage generation part(120) generates voltages of several levels, and supplies a voltage of a level capable of compensating the variation of program/erase characteristics as a program/erase voltage of the flash memory cell according to a signal of the program/erase voltage level determination part.
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