METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent the damage of a bottom metal pattern by forming a damascene pattern after an unfinished via hole. CONSTITUTION: A bottom metal pattern(33) is formed on a semiconductor substrate(31). An insulating layer(35) is formed on the semiconductor substrate(31). The first photoresist layer pattern is formed thereon. An unfinished via hole is formed by removing selectively the insulating layer(35). The first photoresist layer pattern is removed and the second photoresist layer pattern is formed on the insulating layer around the unfinished via hole. A damascene pattern is formed by removing selectively the insulating layer. A metal material is buried into the damascene pattern and a metal wire is formed by a damascene contact(45).