| 摘要 |
PURPOSE: A dicing method of a semiconductor wafer is provided to be capable of preventing the generation of a deformation phenomenon when carrying out a dicing process at the semiconductor wafer. CONSTITUTION: A porous layer(40) is formed at the backside of a semiconductor wafer. At this time, a plurality of semiconductor laser diodes are formed at the upper portion of the semiconductor wafer. A dicing process is then carried out at the surface of the semiconductor wafer by previously forming a cutting groove along the dicing direction. At this time, the cutting groove is used for distributing the pressure supplied to the semiconductor wafer while carrying out the dicing process.
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