METHOD FOR FABRICATING MOS TRANSISTOR

摘要

PURPOSE: A method for fabricating a MOS transistor is provided to perform a transition process of a polysilicon gate electrode to a metal silicide gate electrode by increasing a contact area between the polysilicon gate electrode and a metal layer. CONSTITUTION: A semiconductor substrate(21) including a polysilicon electrode, a spacer(26), and a source/drain region(23) is provided. An insulating layer(29) is formed on the semiconductor substrate(21) including a polysilicon gate electrode. An upper surface of the polysilicon gate electrode is exposed by polishing the insulating layer(29). A side of the polysilicon gate electrode is exposed by etching the insulating layer and the spacer(26). A metal layer is formed thereon. A transition process of the polysilicon gate electrode to a metal silicide gate electrode(31) is performed by performing a thermal process.