| 摘要 |
PURPOSE: An image sensor for improving image quality is provided to improve the quality of an image having locally high luminance. CONSTITUTION: A plurality of pixels are arranged in a matrix direction. Each of the pixels has a photoelectric conversion element and a reset transistor(M1). The photoelectric conversion element generates current according to received light intensity. The reset transistor(M1) resets a node of the photoelectric conversion element to a reset potential. A sample hold circuit(14) sample-holds a pixel potential according to the potential of the node of the pixel. The sample hold circuit outputs differential potential, between the first pixel potential at an end of the integration period after the first reset operation of the pixel and the second pixel potential at an end of a reset noise read period after the second reset operation after the integration period, as a pixel signal. Also in the sample hold circuit(14), when the second pixel potential during the reset noise read period exceeds a predetermined threshold level, the second pixel potential is set to a predetermined reference potential.
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