| 摘要 |
PURPOSE: A method for forming a storage node of a semiconductor device is provided to prevent collapse of the storage node by forming an under-cut portion at lower part of an etch stop nitride layer. CONSTITUTION: An oxide layer(24) and an etch stop nitride layer(28) are sequentially formed on a semiconductor substrate(20) having a conductive layer. The etch stop layer and the oxide layer of a storage node contact region are selectively etched. A capacitor sacrificial oxide layer is formed on the resultant structure. The sacrificial oxide layer is selectively etched. An under-cut portion is formed at the lower part of the etch stop nitride layer(28) by partially wet-etching of the exposed oxide layer(24). Then, a storage node(26) is formed on the resultant structure.
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