| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor memory device is provided to isolate between a gate electrode and a bit line by preventing the exposure of the gate electrode. CONSTITUTION: A gate structure(120) is formed on a semiconductor substrate(100). A dual spacer(130) composed of silicon oxide and silicon nitride is formed at both sidewalls of the gate structure. Contact plugs(140a,140b) are formed between the gate structures. An etch stop layer(145a) and an interlayer dielectric are sequentially formed on the resultant structure. The selected contact plugs(140b) are exposed by etching the interlayer dielectric and the etch stop layer using interlayer dielectric etchants, and by etching the remaining etch stop layer using etch stop etchants.
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