| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a fabricating method thereof are provided to increase the capacitance by increasing an area of a storage node of a capacitor. CONSTITUTION: A nitride layer and the first polysilicon layer are deposited on a silicon substrate(40). A photoresist layer having one or more groove shapes is formed thereon. The first polysilicon layer is etched by using an etch mask as the photoresist layer. The first oxide layer is formed on the first polysilicon layer. The first oxide layer having a projection is formed by performing an etch process. The first polysilicon layer is removed. The nitride layer and the silicon substrate(40) are partially etched by using the first oxide layer as the etch mask. The second oxide layer(52) is formed on the entire surface of the resultant structure. The polysilicon layer is formed on the nitride layer.
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