METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to remove the silicon dangling bonds by forming a bottom metal line and performing a thermal process under the atmosphere of mixed gas of nitrogen and hydrogen. CONSTITUTION: A metal line is formed on a silicon substrate after predetermined fabrication processes are performed. A thermal process is performed under the atmosphere of mixed gas of nitrogen and hydrogen. A mixing ratio of the nitrogen and the hydrogen is 9 to 3. The thermal process is performed under the temperature of 400 to 450 degrees centigrade during 30 to 120 minutes. The metal line is a bottom metal layer of a device if the device is formed by a multi-layer structure.