| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to improve the electrical characteristic and the reliability and enhance the productivity by forming a bit line and a storage node without using a landing plug contact mask. CONSTITUTION: An etch barrier layer and a bottom insulating layer are formed on a semiconductor substrate(31) including a gate electrode(33). A landing plug contact hole for bit line is formed by performing an etch process using a landing plug contact mask for bit line. The landing plug contact hole for bit line is buried by using a landing plug poly for bit line. An interlayer dielectric is formed thereon. A bit line(43) is formed by using a bit line contact mask. A storage node contact hole(45) is formed by using a storage node contact mask. The storage node contact hole(45) is buried by forming storage node contact plugs(47,49).
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