METHOD FOR ISOLATING ELEMENTS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for isolating elements of a semiconductor device is provided to minimize a punch-through phenomenon between adjacent transistors by forming a silicon epitaxial layer using a selective epitaxial growth method. CONSTITUTION: A trench mask layer is formed on a semiconductor substrate(10). A trench mask pattern(20,30) is formed by patterning the trench mask layer. A trench(40) for limiting an active region is formed by etching the exposed semiconductor substrate(10). A trench spacer is formed on a sidewall of the trench(40) in order to expose a bottom side of the trench. A bottom gap region(60) is formed by etching the exposed bottom side of the trench. A bottom gap region(60) is filled by an epitaxial layer(70).