COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR WITH DUAL MICRO LENS AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A complementary metal oxide semiconductor(CMOS) image sensor with a dual micro lens is provided to avoid a decrease of a detection characteristic at the edge of a pixel array and reduce a cross talk phenomenon between adjacent cells by reducing the effect of tilted light incident upon the edge of the pixel array. CONSTITUTION: Associated devices including photodiodes(22) are formed in a substrate(20). A passivation layer(25) is formed on the substrate. The first micro lens(28) is formed on the passivation layer. A nitride layer(29) is formed along the surface of the first micro lens. The passivation layer and the nitride layer are coated with an over-coating layer. The entire pixel array is covered with the second micro lens(31) formed on the over-coating layer.