| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to perform easily an ion implantation process by removing an etch stop layer between gate electrodes. CONSTITUTION: A gate electrode is formed on a cell part(100) and a peripheral circuit part(200). An etch stop layer(17,19) is formed on a surface of the resultant structure. A spacer is formed on a sidewall of the gate electrode by etching the etch stop layer of the peripheral circuit part(200). An anti-reflective coating(31) is formed on the entire surface of the resultant structure. A photoresist pattern(33) for coating the peripheral circuit part is formed on the anti-reflective layer(31). The etch stop layer(17,19) is exposed by removing the anti-reflective coating from the cell part(100). The exposed etch stop layer(17,19) is removed. The photoresist pattern(33) and the anti-reflective coating(31) are removed from the cell part(100).
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