| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to simplify manufacturing processes by connecting an upper electrode to a metal line without forming a contact hole. CONSTITUTION: A capacitor including a lower electrode(24'), a dielectric film(25') and an upper electrode(26') is formed on a semiconductor substrate(20). A capacitor insulating layer(27) is formed on the capacitor and planarized to expose the upper electrode(26') of the capacitor. A metal line(28') is directly formed on the exposed upper electrode.
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