| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing turn-on and hump of a parasitic transistor caused by lateral diffusion of impurity ions. CONSTITUTION: The first conductive type semiconductor substrate(20) defined by an isolation and active region is prepared. An isolation layer(21) is formed at the isolation region. A gate insulating layer(22) and a doped polysilicon layer(23) are sequentially formed on the substrate. The first conductive type impurity ions are implanted into the doped polysilicon layer of the isolation region by counter-doping. At this time, the dose of the ion-implantation processing is 1E15-1E17 ions/cm¬2.
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