| 摘要 |
PURPOSE: A semiconductor substrate and a method for manufacturing the same are provided to improve operation speed by enhancing contact area between a bitline contact and a landing plug. CONSTITUTION: A field oxide layer(32) is formed at a semiconductor substrate(31) to define an active region. After forming the first interlayer dielectric(37a) on the resultant structure, a landing plug(38a) is formed to connect the active region through the first interlayer dielectric. After forming the second interlayer dielectric(39) on the resultant structure, a bitline(41) is formed to simultaneously connect the field oxide layer and the landing plug through the second and first interlayer dielectric.
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